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Integrated Circuit Cells
Logic gates
NAND
The NAND has two drivers in series, each 200 x 20 μm. The load is 10 x 40 μm. This
results in ΒR of 20.
NOR
The NOR has two drivers in parallel, each 100 x 20 μm and a load transistor of 10
x 40 μm. This results in ΒR of 20.
Large Ring Oscillator
The large ring oscillator is designed using the standard design rules. Therefore,
if most of your devices work, it should work also. The drivers' gate length and
width are 20 and 100 μm, respectively. The loads' gate lengths and widths are 40
and 10 μm, respectively.
Small Ring Oscillator
The small ring oscillator is designed with much lower tolerances. Misalignment must
not exceed 7.5 μm between any two layers. The drivers' gate length and width are
10 and 50 μm, respectively. The load's gate lengths and widths are 20 and 5 μm,
respectively.
For Additional Information Consult:
- John P. Uyemura, Fundamentals of MOS Digital Integrated Circuits, (Addison- Wesley,
Reading, MA, 1988).
- Edward S. Yang, Microelectronic Devices, (McGraw-Hill, New York, 1988).
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Devices
LASI was used for mask layout.
The mask set is currently under revision 1998: Dane Sievers, which is a minor redesign
of revision 1994: Ron Stack. All revisions are based on the work of revision 1991: Kevin Tsurutome.
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