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 Dionex O2 Plasma Asher

Description Operation

Plasma ashing is an economical and efficient technique for removing photoresist from a wafer.

A mechanical vacuum pump is used to reduce the pressure of the plasma chamber. A throttle valve between the pump and chamber allows for control of chamber pressure. Oxygen is injected at a controlled rate into the chamber.

Molecular oxygen (O2) does not react appreciably with photoresist at room temperature. It must be in a higher energy state in order for it to react. Oxygen radicals, such as O, must be created to initiate a low temperature reaction.

A radio frequency (13.56MHz) oscillator connected in a capacitively coupled arrangement provides the energy to create the oxygen radicals (plasma). A small portion of the O2 will dissociate to form monatomic O in the plasma (along with ionized species).

The monatomic O reacts with the organic photoresist to form volatile (gaseous at low pressure) products such as CO, CO2, and water. The reaction products are then pumped out of the chamber.

Process Equipment

· Gaertner Ellipsometer

· Evaporator (CVE)

· Evaporator (LDS)

· Filmetrics FT-20

· Prometrix FT650

· Four Point Probe (LDS)

· Four Point Probe (Veeco)

· Furnace

· Plasma Asher

· Spin-Rinse-Dryer

· Stepper (Nikon)

· Stepper (Ultratech)

· Probe Stations


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