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P-MOSFETs

The ICS Instructions contain the basic procedures for making measurements. This screen is intended to point out things unique to using the PMOS model file.

Device Selection

Below are some guidelines for chosing which devices to measure for each of the Devices Under Test (DUTs). Normally, you will only have to fill in a single model since each requires probing 3 devices.

pMOSFETs
  • largeUse the 20 μm gate oxide PMOSFET
  • narrowUse one of the left-most FETs in the bottom row of the pMOSFET array.
  • shortUse the shortest channel gate oxide pMOSFET you can find that works. Think about which diffusion created the source and drain, then try to figure out what the shortest possible channel length device will work - this will save you time by eliminating devices that will probably be shorted.
  • cap perimeterUse the "large" FET for this measurement. It doesn't matter whether the Drainor Source is used for the CM(L) connection.
  • cap areaUse the "narrow" FET for this measurement. It doesn't matter whether the Drain or Source is used for the CM(L) connection.

Probe Assignments

  • SMU1 and CM(H) → probe1 → Substrate (long rectangular pads at the top and bottom of the cell)
  • SMU2 and CM(L) → probe2 → Drain
  • SMU3 → probe3 → Gate
  • SMU4 and CM(L) → probe4 → Source

Note: CM(L) will have to be connected to either the Drain (probe2) or Source (probe4) as needed to complete the measurements.

Perform the following tests in order:

  1. MOS Capacitor

  2. PMOSFET

  3. pn Diode

  4. BJT

ICS Reference

  · Introduction

  · Starting

  · File Structure

  · Test Setup

  · Measurements

  · Transforms

  · Plots

IC-CAP Files

  · Tutorial Model

  · Hardware Setup

  · Sample Tutorial Dataset

Data Sheets

  · MTP2955

  · 2N2222A

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