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P-MOSFETs
The ICS Instructions contain the basic procedures for making measurements. This
screen is intended to point out things unique to using the PMOS model file.
Device Selection
Below are some guidelines for chosing which devices to measure for each of the Devices
Under Test (DUTs). Normally, you will only have to fill in a single model since
each requires probing 3 devices.
- large → Use the 20 μm gate oxide PMOSFET
- narrow → Use one of the left-most FETs in the bottom row of the
pMOSFET array.
- short → Use the shortest channel gate oxide pMOSFET you
can find that works. Think about which diffusion created the source and drain,
then try to figure out what the shortest possible channel length device will work
- this will save you time by eliminating devices that will probably be shorted.
- cap perimeter → Use the "large" FET for this measurement.
It doesn't matter whether the Drainor Source is used for the
CM(L) connection.
- cap area → Use the "narrow" FET for this measurement. It
doesn't matter whether the Drain or Source is used for the
CM(L) connection.
Probe Assignments
- SMU1 and CM(H) → probe1 → Substrate (long rectangular pads at the top and bottom of the cell)
- SMU2 and CM(L) → probe2 → Drain
- SMU3 → probe3 → Gate
- SMU4 and CM(L) → probe4 → Source
Note: CM(L) will have to be connected to either the Drain (probe2) or Source (probe4)
as needed to complete the measurements.
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Perform the following tests in order:
1.
2.
3.
4.
ICS Reference
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IC-CAP Files
· Tutorial Model
· Hardware Setup
· Sample Tutorial Dataset
Data Sheets
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