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GT8 · Oxide growth calculation (Grove’s Model)
and
 ,
and
Where T is in Kelvin
Coefficients for Grove's Model
Note: the coefficients given below are for (111) oriented wafers. To solve the Deal-Grove model
for oxidation of a (100) wafer, divide C2 by 1.68 (Anner, p.594).
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C1 (cm2/s) |
C2 (cm/s) |
b1 (K) |
b2 (K) |
|
Dry |
2.144 x 10-9 |
0.173 |
1.427 x 104 |
2.320 x 104 |
|
Wet |
5.940 x 10-10 |
2.490 |
8.237 x 103 |
2.320 x 104 |
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Steam |
1.070 x 10-9 |
4.530 |
9.049 x 103 |
2.378 x 104 |
SiO2 Diffusion Coefficient Calculation
|
Diffusant |
A* |
B* |
D@1200°C |
|
H2 |
3.02 |
3490 |
4 x 10-6cm2/s |
|
He |
6.57 |
1050 |
5 x 10-8 |
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H2O |
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|
2 x 10-9 |
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O2 |
|
|
3 x 10-8 |
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Al |
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|
2 x 10-11 |
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Ga |
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|
4 x 10-12 |
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Sb |
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2 x 10-14 |
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P (open tube, P2O5) |
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|
3 x 10-15 |
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B |
3.55 |
15400 (T<1100°C) |
2.5 x 10-16 |
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10.24 |
6300 (T>1100°C) |
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General Equation for Calculation of Diffusion Coefficient
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Relative dielectric constant
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SiO2 atomic concentration (cm-3)
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Sources
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T in Kelvin
A & B from above
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εr = 3.9 |
2.3 x 1022
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Burger and Donovan, Vol. 1
Grove
Ghandi |
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Graphs and Tables
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