References

Oxidation

• M. Atalla, E. Tannenbaum, E. J. Scheibner, "Stabilization of Si Surfaces by Thermally Grown Oxides," Bell System Tech. J., 38, 749 (May 1959). (Same as Bell Telephone Monograph 3254, see especially pp. 15 and 16.)
• E. Deal and A. S. Grove, "General Relationship for the Thermal Oxidation of Silicon," J.A.P., 36, 37770 (December 1965).
• J. Frosch and L. Derick, "Surface Protection and Selective Masking During Diffusion in Si," J. Electrochem. Soc., l04, 547 (1957).
• Burger and Donovan, Fundamentals of Silicon Integrated Device Technology, Vol. 1, pp. 93- 98.
• Ghandhi, The Theory and Practice of Microelectronics, Ch. 6.
• Glaser/Subak-Sharpe, Integrated Circuit Engineering, Section 5.6.
• Anner, Planar Processing Primer, Ch 5.

Four Point Probe

• Anner, Planar Processing Primer, Sections 3.4 - 3.11.
• Gibbons, "Ion Implantation in Semiconductors - Part I, Range Distribution Theory and Experiments," Proc. IEEE 56, (1968), p. 295.
• Ghandhi, Chapters 4 and 5.
• Bond and F. M. Smits, "Interference Microscope for Measurement of Extremely Thin Surface Layers," BSTJ, 35, 1209 (Sept. 1956). (Same as BT Monograph 3682.)

Metal-Semiconductor Systems

• Biondi, Transistor Technology, 3, 1958, Chapter 7.
• Warner and Fordemwalt, eds., Integrated Circuits, Design Principles and Fabrication, 1965, pp. 307-309.

P-N Junction Capacitance

• SEEC, Vol. 2, Section 5.4, pp. 93-96.

Vacuum Technology

• Van Atta, Vacuum Science and Engineering, McGraw-Hill.
• Brunner and Batzer, Practical Vacuum Technique, Reinhold.
• Guthrie, Vacuum Technology, Wiley.

Theoretical

• Smits, "Formation of Junction Structures by Solid State Diffusion," Proc. IRE, 43, 1049 (1958). (Same as BT Monograph 3136.)

Diffusion

• D'Asaro, "Diffusion and Oxide Masking in Si by the Box Method," S.S.E., 1, 3 (1960). (Same as BT Monograph 3704.)
• Goldsmith, Olmstead, and Scott, Jr., “Boron Nitride as a Diffusion Source for Silicon," RCA Review, 28, 2, pp. 444-350 (June, 1967).
• Anner, Planar Processing Primer, Chapters 6 and 7.