Boron Drive Diffusion
The boron drive performs two functions: it lowers the surface concentration and
drives the junction deeper into the wafer.
The boron concentration near the surface after predeposition is too high and the
junction depth is too shallow to act as a good base. After the BSG is removed from
the surface of the wafer, a 'sourceless' diffusion (drive) will lower the surface
concentration and simultaneously drive the dopant deeper into the wafer. The distribution
can be approximated as a Gaussian profile:
and:
Where:
N0 = surface concentration (cm-3)
x = position inside silicon relative to the surface
D = diffusion coefficient for dopant (cm2/s)
t = time (seconds)
and
N0 = surface concentration after the drive (cm-3)
N01 = surface concentration after the predep (cm-3)
D1 = diffusion coefficient of dopant during the predep (cm2/s)
t1 = time of the predep (seconds)
D2 = diffusion coefficient of dopant during the drive (cm2/s)
t2 = time of the drive (seconds)
In addition to redistribution of the dopant, another oxide layer is grown to act
as a diffusion mask for phosphorus predeposition.
Equipment
Lindbergh-Tempress 8500 manual oxidation furnace chamber 7B
Supplies
Operating parameters
- Furnace temperature:
1100
°
- N2 flow
- standby: 110 ± 10
- processing: 0
- O2 flow
- standby: 0
- processing: 110 ± 10
- H2 flow
- standby: 0
- processing: 40 ± 10
- The oxidation will consist of three steps:
-
10
min dry oxidation (O2 only)
-
30
min steam oxidation (H2 and O2)
-
5
min dry oxidation (O2 only)
Equipment/controls/tools locations
- Temperature controller: on the side of the furnace
- Gas panel: second rack from the top in the back of the furnace
- Quartz handling: covered cart is to the left of the furnace, tongs are inside
- Boat: at the center of the furnace
Operating precautions
High temperatures
Use the high temperature gloves when handling hot equipment.
Contamination issues
- Quartzware is easily contaminated by alkali ions. This leads to premature quartz
failure (breakage) due to devitrification as well as unstable MOSFET Vt.
Once quartz is contaminated, little can be done to remove the contamination.
- Always wear latex gloves when working with the furnace.
- N2 should always be flowing in standby to minimize contamination by backstreaming
of air in the room into the hot chamber.
Operating procedure
- Have your instructor check the boron drive furnace and support equipment (i.e.,
gas flows). The furnace should be at
1100
°C.
- Degrease your wafer using the instructions in Appendix B of the paper version
if you did not perform the glass etch during the same lab period.
- Insert wafer into boron drive furnace using Appendix F of the paper version as a
guide.
- Perform the following drive recipe at T =
1100
°C.
- Dry oxygen drive for
10
min .
- Steam drive for
30
min .
- Back to a dry drive for
5
min .
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