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Load Inverters

Resistor Load Inverter

Resistor Load Inverter

The resistor load inverter is designed to be configured several ways. There are five drive FETs, with W/L ratios corresponding to 1, 2, 3, 4, and 5. The FETs designed length is 20 μm, and the designed widths are 20, 40, 60, 80, and 100 μm. The resistor has nine pads on it, each corresponding to a different load resistor length.

FET Load Inverter

Resistor Load Inverter

The FET load inverter has been designed with 4 drivers and 4 loads. You can choose which driver/load combination to use to produce the best voltage transfer characteristics. The four drivers are gate 20 μm long, and 20, 50, 100, and 200 μm wide. The loads are all 10 μm wide and 20, 30, 40 and 50 microns long. The W/L ratios for the drivers and L/W ratios for the loads are printed on the mask.

Devices

BJTs

Capacitors

Contact Resistance

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nMOSFETs

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Device Cell


LASI was used for mask layout.

The mask set is currently under revision 1998: Dane Sievers, which is a minor redesign of revision 1994: Ron Stack. All revisions are based on the work of revision 1991: Kevin Tsurutome.


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